FW513 no. a1870-1/5 features ? fet r ds (on)=5.8 (typ.), 10v drive ? frd v f =1.1v (typ.), t rr =40ns (typ.) ? nch mosfet+frd speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i d 0.35 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.4 a allowable power dissipation p d when mounted on ceramic substrate (1000mm 2 0.8mm) 1unit 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c continued on next page. package dimensions unit : mm (typ) 7005a-009 ordering number : ena1870 n1710pb tkim tc-00002515 sanyo semiconductors data sheet FW513 mosfet : n-channel silicon mosfet frd : ultrahigh-speed switching diode general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : sop8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 1,000 pcs./reel packing type : tl marking electrical connection w513 lot no. tl 1 : anode 2 : no contact 3 : source 4 : gate 5 : drain 6 : drain 7 : cathode 8 : cathode sanyo : sop8 1.8 max 4.4 6.0 0.8 0.8 5.0 0.2 0.1 0.3 0.43 1.27 0.7 1.5 14 5 8 8765 1234
FW513 no. a1870-2/5 continued from preceding page. parameter symbol conditions ratings unit [frd] repetitive peak reverse voltage v rrm 600 v nonrepetitive peak reverse surge voltage v rsm 600 v average output current i o 1a surge forward current i fsm sine wave, 10ms 4 a junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [mosfet] drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 600 v zero-gate voltage drain current i dss v ds =480v, v gs =0v 1 ma gate-to-source leakage current i gss v gs =24v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance | yfs | v ds =10v, i d =0.2a 0.48 s static drain-to-source on-state resistance r ds (on) i d =0.2a, v gs =10v 5.8 7.6 input capacitance ciss v ds =30v, f=1mhz 130 pf output capacitance coss v ds =30v, f=1mhz 25 pf reverse transfer capacitance crss v ds =30v, f=1mhz 4.0 pf turn-on delay time t d (on) see speci ed test circuit. 9.1 ns rise time t r see speci ed test circuit. 15 ns turn-off delay time t d (off) see speci ed test circuit. 18 ns fall time t f see speci ed test circuit. 19 ns total gate charge qg v ds =300v, v gs =10v, i d =0.35a 6.2 nc gate-to-source charge qgs v ds =300v, v gs =10v, i d =0.35a 0.9 nc gate-to-drain ?miller? charge qgd v ds =300v, v gs =10v, i d =0.35a 3.8 nc diode forward voltage v sd i s =0.35a, v gs =0v 0.76 1.2 v [frd] reverse voltage v r i r =1ma 600 v forward voltage v f i f =1a 1.1 1.3 v reverse current i r v r =600v 10 a reverse recovery time t rr 1i f =1a, di / dt=100a/ s4050ns t rr 2i f =0.5a, i r =1a 16 ns thermal resistance rth(j-c) junction -case 6 c / w switching time test circuit [mosfet] pw=10 s d.c. 1% p. g 50 g s d i d =0.2a r l =1000 v dd =200v v out FW513 v in 10v 0v v in
FW513 no. a1870-3/5 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 it16051 134 25 15 78 6 9 11 12 13 14 10 0 v ds =10v 25 c it15875 04 2 6 8 101214 18 16 20 0 2.0 0.6 0.8 0.2 1.8 1.6 1.4 1.2 1.0 0.4 v gs =5v 8v 6v 10v 7v ta= --25 c 75 c 15v | y fs | -- i d r ds (on) -- v gs r ds (on) -- ta sw time -- i d gate-to-source voltage, v gs -- v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd it16054 it16077 1.2 1.0 0.4 0.8 0.6 0.2 0.001 0.1 5 7 3 2 3 2 2 1.0 5 7 3 0.01 2 5 7 3 3 0.1 0.01 3 2 2 7 5 7 5 1.0 3 2 0.01 0.001 23 57 0.1 23 57 23 2 1.0 57 ta= - -25 c 75 c 25 c ta=75 c 25 c --25 c v gs =0v v ds =10v 10 1.0 100 3 2 2 3 7 5 3 2 5 7 5 10 3 100 7 5 7 5 2 050 25 20 35 30 45 40 51015 it15894 f=1mhz coss ciss crss it15893 0.1 23 23 57 1.0 t d (off) t f t d (on) t r v dd =200v v gs =10v 7 4 10 9 8 7 6 5 024 4 8 12 16 20 it16052 i d =0.2a ta=25 c it16053 --60 --40 --20 160 0 20 40 60 80 100 120 140 0 20 6 8 2 4 18 16 14 12 10 v gs =10v, i d =0.2a [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet]
FW513 no. a1870-4/5 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w i f -- v f forward current, i f -- a i fsm -- t surge forward current, i fsm (peak) -- a time, t -- s cj -- v r junction capacitance, cj -- pf reverse voltage, v r -- v forward voltage, v f -- v reverse voltage, v r -- v i r -- v r reverse current, i r -- a 0 1.2 0.4 0.8 1.0 0.2 0.6 1.4 0.001 0.01 0.1 1.0 10 it15497 ta=150 c --25 c 0.1 1.0 22 10 2 2 10 1.0 3 5 7 5 3 f=100khz it15499 100 2 3 57 3 57 3 57 75 c 200 0 600 it15498 100 10 0.1 1.0 0.01 0.001 500 100 300 400 125 c ta=150 c 100 c 75 c 50 c 25 c 100 c 125 c 50 c 25 c 0 c 7 0.01 23 7 0.1 0 52 23 37 1.0 5 12 14 8 4 10 6 2 it15500 [mosfet] [mosfet] [mosfet] [frd] [frd] [frd] [frd] it16075 it16055 0123 6 5 49 8 7 0 2 4 8 12 6 10 14 16 v ds =300v i d =0.35a 0.001 0.01 2 3 5 7 0.1 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 10 23 5 57 2 100 1000 3 1.0 723 57237 5 10 i dp =1.4a (pw 10 s) i d =0.35a operation in this area is limited by r ds (on). 100 s 1ms 10ms 100ms dc operation it16076 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 1.6 1.5 1.2 1.4 0.2 0.8 1.8 when mounted on ceramic substrate (1000mm 2 0.8mm) 1unit ta=25 c single pulse when mounted on ceramic substrate (1000mm 2 0.8mm) 1unit
FW513 no. a1870-5/5 ps this catalog provides information as of november, 2010. speci cations and information herein are subject to change without notice. note on usage : since the FW513 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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